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Institution:集成电路学院
Title of Paper:Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Journal:IEEE Transactions on Electron Devices
Document Code:A463292AAD9345A8873E96D117A76844
Issue:4
Page Number:1377
Number of Words:5000
Translation or Not:No
Date of Publication:2018-03
Release Time:2023-11-02