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Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Affiliation of Author(s):集成电路学院
Journal:IEEE Transactions on Electron Devices
Document Code:A463292AAD9345A8873E96D117A76844
Issue:4
Page Number:1377
Number of Words:5000
Translation or Not:no
Date of Publication:2018-03-05