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Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
Affiliation of Author(s):集成电路学院
Journal:NANOTECHNOLOGY
First Author:郑帅英
Document Code:DFB94002A24C4981A267B49A56B9EC7A
Volume:35
Issue:0
Page Number:155203
Number of Words:7
Translation or Not:no
Date of Publication:2024-04-08