Release Time:2021-10-09 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Extremely high-gain source-gated transistors
Institution:集成电路学院
Title of Paper:Extremely high-gain source-gated transistors
Journal:PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
First Author:张嘉炜
Document Code:5837A7A20E1B44CE944CC0C0DB87B0CB
Volume:116
Issue:11
Page Number:4843
Number of Words:5000
Translation or Not:No
Date of Publication:2019-03