徐明升
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Scientific Research
Paper Publications
-
王雪松. 关于InGaN/GaN多量子阱结构内量子效率的研究. ACTA PHYSICA SINICA, 343-349, 2024.
-
王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.
-
Ge, Lei. High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed. Journal of Physical Chemistry Letters, 14, 592, 2024.
-
胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance. VACUUM, 211, 2024.
-
陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.