徐明升
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Scientific Research
Paper Publications
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Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2025.
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张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2025.
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王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
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王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 179-183, 2025.
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王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.