徐明升
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Scientific Research
Paper Publications
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王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.
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Ge, Lei. High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed. Journal of Physical Chemistry Letters, 14, 592, 2024.
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胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance. VACUUM, 211, 2024.
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陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.
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罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors. Journal of Physics and Chemistry of Solids, 187, 2024.