徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [1] 洒子旭. Constructing Hybrid Dimensional Nanowires Array/Nanosheet Heterojunction of GaSb/PbI2 for Self-Powered Imaging, Photocommunication, and Omnidirectional Weak-Light Photodetection. Advanced Optical Materials, 13, 2025.
- [2] 高思滢. Toward Smart SiC Self-Powered Deep Ultraviolet Photodetectors. Journal of Physical Chemistry Letters, 16, 8329-8336, 2025.
- [3] 万俊辰. Toward flexible and omnidirectional self-powered near-ultraviolet photodetection by constructing a mixed-dimensional nanobelt/nanosheet heterojunction of CdS/PbI2. NANOSCALE, 17, 11322-11328, 2025.
- [4] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
- [5] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
- [6] 王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
- [7] 王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024, 179-183, 2025.
- [8] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
- [9] 罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
- [10] 王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode. 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2024.