徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [1] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content. Chinese Physics B, 30, 615-619, 2021.
- [2] Wang Xue-Song. Internal quantum efficiency of InGaN/GaN multiple quantum well. ACTA PHYSICA SINICA, 63, 127801-1-127801-7, 2014.
- [3] 李建飞. W-shaped injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate. Optics Express, 25, A871-A879, 2017.
- [4] 葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12, 2022.
- [5] 王希玮. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [6] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [7] 徐明升. A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor. IEEE Electron Device Letters, Vo.43, 1271, 2022.
- [8] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CRYSTENGCOMM, 23, 7245, 2021.
- [9] 冀子武. Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures. Superlattices Microstruct, 2022.
- [10] 屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer. Chin. Phys. B, 2022.