徐明升
+
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [1] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
- [2] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
- [3] 王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
- [4] 王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 179-183, 2025.
- [5] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
- [6] 罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
- [7] 王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode. 2024.
- [8] 胡秀飞. Roughness control in the processing of 2-inch polycrystalline diamond films on 4H-SiC wafers. Materials Science in Semiconductor Processing, 184, 2024.
- [9] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. 物理结果, 62, 2024.
- [10] 王雪松. 关于InGaN/GaN多量子阱结构内量子效率的研究. ACTA PHYSICA SINICA, 343-349, 2014.