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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

徐明升

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
Release Time:2022-05-16 | Hits:

Institution:新一代半导体材料研究院

Title of Paper:Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Journal:CrystEngComm

First Author:刘磊

Document Code:E88578C2C177453189CF279BD1BF982A

Issue:23

Page Number:7245

Number of Words:5000

Translation or Not:No

Date of Publication:2021-09