Institution:集成电路学院

Title of Paper:W-shaped injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate

Journal:Optics Express

Key Words:III-V semiconductors;Light emitting diodes;Quantum theory;Semiconductor quantum wells;Silicon;Substrates;Temperature distribution

First Author:李建飞

Document Code:1395248383244898305

Volume:25

Issue:20

Page Number:A871-A879

Number of Words:5000

Translation or Not:No

Date of Publication:2017-10