Date of Publication:2021-04-01 Hits:
Affiliation of Author(s):集成电路学院
Journal:Chinese Physics B
Key Words:Electron scattering;Gallium alloys;Growth temperature;III-V semiconductors;Ionic conduction;Lattice mismatch;Photoluminescence;Screening;Semiconductor alloys;photoluminescence;carrier localization effect;internal quantum efficiency;growth temperature
First Author:李睿
Document Code:1437309807907311618
Volume:30
Issue:4
Page Number:615-619
Number of Words:4343
Translation or Not:no
Date of Publication:2021-04-01
Date of Publication:2021-04-01