Institution:集成电路学院

Title of Paper:Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content

Journal:Chinese Physics B

Key Words:Electron scattering;Gallium alloys;Growth temperature;III-V semiconductors;Ionic conduction;Lattice mismatch;Photoluminescence;Screening;Semiconductor alloys;photoluminescence;carrier localization effect;internal quantum efficiency;growth temperature

First Author:李睿

Document Code:1437309807907311618

Volume:30

Issue:4

Page Number:615-619

Number of Words:4343

Translation or Not:No

Date of Publication:2021-04