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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

Current position: Home / Scientific Research / Paper Publications
Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode
Date of Publication:2024-08-10 Hits:

Affiliation of Author(s):新一代半导体材料研究院
Journal:IEEE Electron Device Letters
First Author:王新宇
Document Code:1806576903362662402
Number of Words:3
Translation or Not:no
Date of Publication:2024-08-10
Date of Publication:2024-08-10

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