Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
发布时间：2021-06-02 点击数：
所属单位：集成电路学院
论文名称：Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
发表刊物：JOURNAL OF LUMINESCENCE Journal
第一作者：时凯居
论文编号：E69B56299AC14B35A72BF74A6AC8870C
卷号：223
字数：3
是否译文：否
发表时间：2020-07