- [1] 王雪松. 关于InGaN/GaN多量子阱结构内量子效率的研究. ACTA PHYSICA SINICA, 343-349, 2014.
- [2] 王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.
- [3] Ge, Lei. High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed. Journal of Physical Chemistry Letters, 14, 592, 2023.
- [4] 胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance. VACUUM, 211, 2023.
- [5] 陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.
- [6] 罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors. Journal of Physics and Chemistry of Solids, 187, 2024.
- [7] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
- [8] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content. Chinese Physics B, 30, 615-619, 2021.
- [9] Wang Xue-Song. Internal quantum efficiency of InGaN/GaN multiple quantum well. ACTA PHYSICA SINICA, 63, 127801-1-127801-7, 2014.
- [10] 李建飞. W-shaped injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate. Optics Express, 25, A871-A879, 2017.
- [11] 葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12, 2022.
- [12] 王希玮. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [13] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [14] 徐明升. A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor. IEEE Electron Device Letters, Vo.43, 1271, 2022.
- [15] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CRYSTENGCOMM, 23, 7245, 2021.
- [16] 冀子武. Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures. Superlattices Microstruct, 2022.
- [17] 屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer. Chinese Physics B, 2022.
- [18] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chinese Physics B, 30, 2021.
- [19] 李睿. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160, 2021.
- [20] 时凯居. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11, 2033, 2021.