Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content
发布时间：2024-01-09 点击数：
所属单位：集成电路学院
论文名称：Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content
发表刊物：Chinese Physics B
关键字：Electron scattering;Gallium alloys;Growth temperature;III-V semiconductors;Ionic conduction;Lattice mismatch;Photoluminescence;Screening;Semiconductor alloys;photoluminescence;carrier localization effect;internal quantum efficiency;growth temperature
第一作者：李睿
论文编号：1437309807907311618
卷号：30
期号：4
页面范围：615-619
字数：4343
是否译文：否
发表时间：2021-04