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Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties
Release Time:2024-12-20| Hits:

Institution:新一代半导体材料研究院
Title of Paper:Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties
Journal:Chinese Physics B
First Author:Li, Zhen-Hua
Document Code:D4F27C89E81B4E55B7C8C6C9EAC7323D
Volume:31
Issue:1
Number of Words:3000
Translation or Not:No
Date of Publication:2022-01
Release Time:2024-12-20

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