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Mg-acceptor activation mechanism and transport characteristics in highly Mg-doped AlGaN grown by metalorganic vapor phase epitaxy,
Release Time:2024-12-21| Hits:

Institution:新一代半导体材料研究院
Title of Paper:Mg-acceptor activation mechanism and transport characteristics in highly Mg-doped AlGaN grown by metalorganic vapor phase epitaxy,
Journal:Chinese Physics B
First Author:徐庆君
Document Code:8B942A06CCCA43EEAD7456D3C7DA9A2B
Issue:29
Number of Words:3000
Translation or Not:No
Date of Publication:2020-03
Release Time:2024-12-21