郁万成
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Effect of basal plane bending on the atomic step morphology of the 4H-SiC substrate surface
  • Title of Paper:
    Effect of basal plane bending on the atomic step morphology of the 4H-SiC substrate surface
  • Journal:
    Vaccum
  • Page Number:
    2023, 212,112013
  • Translation or Not:
    No
  • Release Time:
    2023-09-28
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