郁万成
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Stepwise growth of graphene on silicon carbide: Decoupling formation buffer layer from graphene growth
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Stepwise growth of graphene on silicon carbide: Decoupling formation buffer layer from graphene growth
  • Journal:
    NANO RESEARCH
  • First Author:
    姜晓呈
  • All the Authors:
    孙丽,徐现刚,陈秀芳,Huaying Ren,董强
  • Document Code:
    E7523267C0B14F86BCB2C4B78AAAA8EF
  • Issue:
    doi.org/10.26599/NR.2026.94908882
  • Number of Words:
    9400
  • Translation or Not:
    No
  • Date of Publication:
    2026-05
  • Release Time:
    2026-06-03
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