Growth of six inches N-type SiC single crystals with low dislocation defects
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Institution:新一代半导体材料研究院
Title of Paper:Growth of six inches N-type SiC single crystals with low dislocation defects
Journal:Wide Bandgap Semiconductors China (SSLChina: IFWS)
First Author:张福生
Document Code:EE7FA6D125BB4712A4F1375EC47148C9
Number of Words:2928
Translation or Not:No
Date of Publication:2019-10
Release Time:2021-12-09