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Associate Professor
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- 张福生. Growth of six inches N-type SiC single crystals with low dislocation defects. Wide Bandgap Semiconductors China (SSLChina: IFWS), 2021.
- 张福生. High mobility and large domain decoupled epitaxial graphene on SiC (000-1) surface obtained by nearly balanced hydrogen etching. Materials Letters, 2021.
- 张福生. High Performance Metal-Graphene-Metal Photodetector Employing Epitaxial Graphene on SiC(0001) Surface. Journal of Materials Science: Materials in Electronics, 2021.
- 张福生. Large-area Uniform Epitaxial Graphene on SiC by Optimizing Temperature Field. Wide Bandgap Semiconductors China (SSLChina: IFWS), 2021.
- 张福生. 无微管缺陷六英寸SiC 单晶的制备. 硅酸盐学报, 2021.
- 张福生. Ge 掺杂碳化硅晶体的生长缺陷. 《无机材料学报》, 2021.
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