一种准本征半绝缘碳化硅单晶的制备方法
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Title:一种准本征半绝缘碳化硅单晶的制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202111524463.4
Number of Inventors:6
Service Invention or Not:No
Application Date:2021-12-14
Publication Date:2023-06-13
Authorization Date:2023-06-13
Release Time:2023-09-27