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一种准本征半绝缘碳化硅单晶的制备方法

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Affilication of Author(s):新一代半导体材料研究院

Type of Patent:发明

Application Number:202111524463.4

Number of Inventors:6

Service Invention or Not:no

Application Date:2021-12-14

Publication Date:2023-06-13

Authorization Date:2023-06-13

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