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一种卤化亚汞单晶体的生长装置及方法

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Title:一种卤化亚汞单晶体的生长装置及方法

Institution:晶体材料研究所

Type of Patent:发明

Application Number:2018106011050

Number of Inventors:2

Service Invention or Not:No

Application Date:2018-06-12

Release Time:2019-04-15

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