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提升卤化亚汞单晶体结晶性和光学透过率的处理方法

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Affilication of Author(s):晶体材料研究院

Type of Patent:发明

Application Number:202011372197.3

Number of Inventors:2

Service Invention or Not:no

Publication Date:2022-07-26

Authorization Date:2022-07-26

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