Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
CRYSTENGCOMM
First Author:
刘磊
Document Code:
52AE4BFE08514483BC24200655DD68FB
Volume:
24
Issue:
10
Page Number:
1840
Translation or Not:
no
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