Institution:新一代半导体材料研究院
Title of Paper:Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Journal:CRYSTENGCOMM
First Author:刘磊
Document Code:52AE4BFE08514483BC24200655DD68FB
Volume:24
Issue:10
Page Number:1840
Translation or Not:No
Date of Publication:2022-03
Release Time:2022-06-05
