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Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    JOURNAL OF MATERIALS CHEMISTRY C
  • First Author:
    王忠新
  • Document Code:
    F3FED4C133DB40B3836EECCB275AA9C5
  • Issue:
    7
  • Page Number:
    17201
  • Number of Words:
    8000
  • Translation or Not:
    no
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