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Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Release Time:2022-06-05| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Journal:CRYSTENGCOMM

First Author:刘磊

Document Code:C3867FFABC184F9BB1BBACD5493F69E6

Volume:23

Issue:41

Page Number:7245

Translation or Not:No

Date of Publication:2021-10

Release Time:2022-06-05

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