Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
CRYSTENGCOMM
First Author:
刘磊
Document Code:
C3867FFABC184F9BB1BBACD5493F69E6
Volume:
23
Issue:
41
Page Number:
7245
Translation or Not:
no
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