Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Applied Surface Science
First Author:
李秋波
Document Code:
EEA4EE88010C49A4A376ADBC15C1CB6F
Issue:
679
Number of Words:
9
Translation or Not:
no
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