Institution:新一代半导体材料研究院
Title of Paper:Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing
Journal:Applied Surface Science
First Author:李秋波
Document Code:EEA4EE88010C49A4A376ADBC15C1CB6F
Issue:679
Number of Words:9
Translation or Not:No
Date of Publication:2024-09
Release Time:2024-09-23