Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Progress in GaN Single Crystals: HVPE Growth and Doping
Journal:Journal of Inorganic Materials
First Author:齐占国
Document Code:424BCBC1F1174F7A985E8AF54F822BF2
Volume:38
Issue:3
Page Number:243
Number of Words:6000
Translation or Not:No
Date of Publication:2023-03
Release Time:2024-10-18