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Construction of High Field-Effect Mobility Multilayer MoS2-Field-Effect Transistors with Excellent Stability through Interface Engineering

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Affiliation of Author(s):微电子学院

Journal:ACS Applied Electronic Materials,2020,2,2132-2140. 中科院 3区,IF:4.494

First Author:Jianfeng Jiang, Yu Zhang*, Aizhu Wang, Jiazhi Duan, Hao Ji, Jinbo Pang, Yuanhua Sang, Xianjin Feng, Hong Liu*, Lin Han

Indexed by:Applied Research

Document Code:656B006047154577BCB9EB8BA6504A70

Issue:7

Translation or Not:no

Date of Publication:2020-07-01

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