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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

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Affiliation of Author(s):海洋研究院

Journal:Nanoscale,2020,12,18356. 中科院 2区，top，IF：8.307

Key Words:光电器件，二维材料

First Author:Yanhao Wang, Jianwei Gao, Bin Wei, Yingkuan Han, Chao Wang, Yakun Gao, Hong Liu, Lin Han, Yu Zhang*

Indexed by:Applied Research

Document Code:707500A5C8C54E009C1AB6CCAEF4D61A

Issue:12

Translation or Not:no

Date of Publication:2020-09-01

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