Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
Hits:
Institution:海洋研究院
Title of Paper:Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
Journal:Nanoscale,2020,12,18356. 中科院 2区，top，IF：8.307
Key Words:光电器件，二维材料
First Author:Yanhao Wang, Jianwei Gao, Bin Wei, Yingkuan Han, Chao Wang, Yakun Gao, Hong Liu, Lin Han, Yu Zhang*
Document Code:707500A5C8C54E009C1AB6CCAEF4D61A
Issue:12
Translation or Not:No
Date of Publication:2020-09
Release Time:2021-05-31