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Institution:晶体材料研究院

Title of Paper:Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect

Journal:Nano Energy，2020,70，104457，中科院1区，top，IF：19.069

First Author:Fulei Wang, Jianfeng Jiang, Qilu Liu, Yu Zhang, Jianjun Wang, Shuhua Wang, Lin Han *, Hong Liu*, Yuanhua Sang*

Document Code:2293F9C42D2445F3952DAA5479EBB20D

Number of Words:5

Translation or Not:No

Date of Publication:2020-04

Release Time:2022-01-18