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Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect

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Affiliation of Author(s):晶体材料研究院

Journal:Nano Energy，2020,70，104457，中科院1区，top，IF：19.069

First Author:Fulei Wang, Jianfeng Jiang, Qilu Liu, Yu Zhang, Jianjun Wang, Shuhua Wang, Lin Han *, Hong Liu*, Yuanhua Sang*

Indexed by:Unit Twenty Basic Research

Document Code:2293F9C42D2445F3952DAA5479EBB20D

Number of Words:5

Translation or Not:no

Date of Publication:2020-04-01

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