Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
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Institution:集成电路学院
Title of Paper:Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
Journal:ACS Applied Electronic Materials
Key Words:Degradation;Density functional theory;Dielectric materials;Electric field effects;Electron mobility;Flexible electronics;Gate dielectrics;Impurities;Layered semiconductors;Molybdenum compounds;Polymethyl methacrylates;Road construction;Silica;Silicon;Stability;Sulfur compounds;Threshold voltage
First Author:Jiang, Jianfeng
Document Code:1395293406388817922
Volume:2
Issue:7
Page Number:2132-2140
Number of Words:20
Translation or Not:No
Date of Publication:2020-07
Release Time:2025-09-22