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Institution:信息科学与工程学院
Title of Paper:Impacts of Lateral Charge Migration on Data Retention and Read Disturb in 3D Charge-Trap NAND Flash Memory
Journal:IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
First Author:彭学阳
Document Code:1402446190850609154
Number of Words:3
Translation or Not:No
Date of Publication:2020-11
Release Time:2023-05-18