詹学鹏

个人信息Personal Information

教授 硕士生导师

性别:男

毕业院校:吉林大学

学历:研究生(博士后)

学位:博士

在职信息:在职

所在单位:信息科学与工程学院

入职时间:2019-07-01

电子邮箱:zhanxuepeng@sdu.edu.cn

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个人简介Personal Profile

詹学鹏,山东大学,信息科学与工程学院

教授,山东大学齐鲁青年/青年学者未来计划,硕士生导师 

工作邮箱:zhanxuepeng@sdu.edu.cn


个人经历:

12019-至今,山东大学,信息学院微电子与纳米技术研究所,副所长书记

22017-2019,山东大学,信息学院,博士后 

32018-2019,   利物浦约翰摩尔斯大学,电子电力与工程学院,访问学者 

42012-2017,吉林大学,电子科学与工程学院微电子学与固体电子学系,博士 

52008-2012,吉林大学,电子科学与工程学院电子科学与技术系,本科


研究方向:

1、探索新型存储器件的工艺制备与特性表征研究,结合材料表征、电学测试、理论模拟的层面,将其拓展到光电响应、应力弯折,生物神经突触仿生的应用中;

2、探究晶体管中缺陷引起随机电报噪声对性能影响的研究, 阐明随机电报噪声的物理机制和器件电荷输运涨落的微观过程;

3、探究飞秒激光微纳精密加工技术,并将其拓展到复杂结构微腔激光器、高带宽高吸收的黑硅材料制备,超疏水小口径人造血管的内壁原位微加工等领域。


学生相关:

1、长期招生硕士研究生/优秀本科生,要求具有半导体器件相关基础,学习刻苦、努力上进。

2、优秀学生可推荐到英国/日本/清华/西交大等攻读硕士/博士学位及博士后工作。

3、支持优秀科研工作成果,参加国际/国内学术会议。

4、毕业生去向一般为海外深造(英国全额奖学金)、半导体芯片相关企业(华为/复旦微)、银行、公务员等。


科研积累:

主持科技部国家重点研发计划青年科学家项目、国家自然科学基金青年基金、山东省自然科学基金重点项目、中国博士后科学基金、山东省高等学校青年创新团队、山东大学教育教学改革项目、山东大学实验室建设项目等,累计申请并获批项目经费在320万元以上。申请/授权中国发明专利15项,第一/通讯作者发表科研论文30篇。获得中国计算机软件著作权1项,受邀为学术桥/教育部学位论文、多个SCI期刊审稿人。


发明专利:

(1) 陈杰智; 汪倩文; 詹学鹏; 纪志罡 ; 半导体单元器件、半导体芯片系统及PUF信息处理系统, 2022-12-27, 中国, ZL201910875894.1 (授权)

(2) 陈杰智; 柏茂颖; 詹学鹏 ; 一种可重构的三态内容可寻址存储器单元, 2022-11-4, 中国,202211375829.0 (申请)

(3) 詹学鹏; 柏茂颖; 陈杰智 ; 一种基于内容可寻址存储器实现图像投影的方法, 2022-10-27, 中国, 202211326564.5 (申请)

(4) 詹学鹏; 王成城; 陈博; 陈杰智 ; 一种多模式可重构的忆阻选通单元及其制备方法, 2022-10-19, 中国, 202211279446.3 (申请)

(5) 陈杰智; 冯扬; 詹学鹏 ; 一种基于非易失存储器的加密存算一体的实现方法, 2022-6-6, 中国,202210632129.9 (申请)

(6) 詹学鹏; 唐鸣丰; 陈杰智 ; 一种储备池计算网络的硬件实现方法, 2022-4-21, 中国,202210419295.0 (申请)

(7) 陈杰智; 贾梦华; 詹学鹏 ; 一种存储器译码方法, 2021-2-3, 中国, 202110146115.1 (申请)

(8) 詹学鹏; 陈杰智; 徐淮良 ; 一种热辅助飞秒激光退火非晶硅的装置, 2020-07-28, 中国,ZL201810857006.9 (授权)

(9) 徐淮良; 詹学鹏; 苏越 ; 利用飞秒激光在陶瓷球表面进行图案加工的装置及方法, 2019-10-29, 中国, ZL201711104932.0 (授权)

(10) 孙洪波,詹学鹏,徐淮良,三维非对称微谐振腔聚合物单模激光器,2017.12.29,中国,ZL201510300187.1 (授权)

(11) 徐淮良,裴为华,苏越,王飞,詹学鹏,张雪莲,张旭,陈弘达,一种解码大脑活动的针状高密度电极阵列的制备方法,2020.12.04,中国,ZL201711398784.8 (授权)

(12) 詹学鹏,梅俊瑶,唐鸣丰,陈杰智,一种基于存储神经网络拓展随机电报噪声信号的方法,2022.03.14, 中国,202310238115.3 (申请) 

(13) 詹学鹏,陈博,王成城,陈杰智,一种基于渐变组分降低HfZrO基铁电电容器矫顽电场的方法,2022.03.15, 中国,202310249145.4 (申请) 

(14)陈杰智,杨少琦,方晓彤,詹学鹏,武继璇:一种固态硬盘短期预警方法。申请号:2023105553541

(15)陈杰智,杨少琦,方晓彤,詹学鹏,武继璇:一种高可靠性 SSD 存储控制方法。申请号:2023104648309



软件著作:

(1) 场效应晶体管先进制程工艺的虚拟仿真软件,  2022SR1097115,  2022.03.01.


学术论文:

[1]. Junyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan*, Jie-Zhi Chen*, Opto-electronic monolayer ZnO memristor produced via low temperature atomic layer deposition, 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications, Hefei, China, October 27- October 29, IEEE 2023:53-54 

[2]. Bo Chen, Chengcheng Wang, Xuepeng Zhan*, Shuhao Wu, Lu Tai, Junyao Mei, Jixuan Wu, and Jiezhi Chen*, Sub-10nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing, Nanotechnology, 2023, 33 495201.

[3]. Yang Feng, Mingfeng Tang, Zhaohui Sun, Yueran Qi, Xuepeng Zhan*, Jing Liu, Junyu Zhang, Jixuan Wu, and Jiezhi Chen*, Fully Flash-based Reservoir Computing Network with Low Power and Rich States, IEEE Transactions on Electron Devices, 2023, 70 (9):4972-4975.

[4]. Chengcheng Wang, Bo Chen, Junyao Mei, Yueran Qi, Yuan Gao, Jixuan Wu, Xuepeng Zhan*, and Jiezhi Chen*, Complementary digital and analog resistive switching based on AlOx monolayer memristors for mixed-precision neuromorphic computing, IEEE Transactions on Electron Devices, 2023, 70 (8):4488-4492. 

[5]. Mingfeng Tang, Junyao Mei, Xuepeng Zhan*, Chengcheng Wang, Junshuai Chai, Hao Xu, Xiaolei Wang*, Jixuan Wu, and Jiezhi Chen*, Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing, IEEE Transactions on Electron Devices, 2023, 70 (6):3372-3377 

[6]. Shuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan*, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, and Jiezhi chen*, Dual-pulse Disturb-free Programming Scheme for FeFET based Neuromorphic Computing, Microelectronics Journal, 137 (2023) 105818

[7]. Wanying Li, Yimeng Guo, Zhaoping Luo, Shuhao Wu, Bo Han, Weijin Hu, Lu You, Kenji Watanabe, Takashi Taniguchi, Thomas Alava, Jiezhi Chen, Peng Gao, Xiuyan Li, Zhongming Wei, Linwang Wang, Yueyang Liu*, Chengxin Zhao*, Xuepeng Zhan*, Zheng Vitto Han*, Hanwen Wang*. A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory. Advanced Materials, 2023, 35(5): 2208266.

[8]. Guoqing Zhao†, Shuhao Wu†, Xuepng Zhan*, Mingfeng Tang, Wei Wei, Lu Tai, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang*, and Jiezhi Chen*, Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing, IEEE Transactions on Nanotechnology, 2022, 21, 747-751.

[9]. Qiu Jin, Mingchong Dai*, Xuepeng Zhan*, Shuguang Wang, and Zuoli He*, Carbon nanotubes and graphene composites used in Cr(VI) detection techniques: A review, Journal of Alloys and Compounds, 922, 2022: 166268.

[10]. Mingfeng Tang, Xue-Peng Zhan*, Shuhao Wu, Maoying Bai, Yang Feng, Guoqing Zhao, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang*, and Jiezhi Chen*, A Compact Fully Ferroelectric-FETs Reservoir Computing Network with Sub-100ns Operating Speed, IEEE Electron Device Letters, 2022, 43(9): 1555-1558.

[11]. Bo Chen, Shuhao Wu, Xiaolin Yu, Mingfeng Tang, Guoqing Zhao, Lu Tai, Xuepeng Zhan*, and Jiezhi Chen*, Ferroelectricity induced double-direction conductance modulation in HfxZr1-xO2capacitors, Nanotechnology, 2022, 33 495201.

[12]. Yaning Wang†, Wanying Li†, Yimeng Guo†, Xin Huang, Zhaoping Luo, Shuhao Wu, Hai Wang, Jiezhi Chen, Xiuyan Li*, Xuepeng Zhan*, Hanwen Wang*, A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction, Journal of Materials Science & Technology, 128 (2022) 239-244.

[13].    Mingtao Xu†, Bo Chen†, Qi Jin, Lu Tai, Xue-Peng Zhan*, and Jie-Zhi Chen*, Voltage and Temperature Dependence of Random Telegraph Noise and Their Impacts on Random Number Generator, Microelectronics Journal, 125 (2022) 105450.

[14].    Weiqiang Zhang†, Bo Chen†, Wei Wei, Lu Tai, Xue-Peng Zhan*, Fei Wang, and Jie-Zhi Chen*, Experimental observations on C-V measurement caused performance degradations in Hf0.5Zr0.5O2 ferroelectric film, 2022 IEEE Electron Devices Technology & Manufacturing (EDTM), Oita, Japan, March 6-March 9, 2022: 378-380.

[15].    Xue-Peng Zhan, Jie-Zhi Chen*, and Zhigang Ji*, Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors, Science China Information Sciences, 65(8), 189405 (2022).

[16].    Mingfeng Tang, Xue-Peng Zhan*, and Jie-Zhi Chen*, Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case, IEEE Journal of the Electron Devices Society, 2022, 10: 192-196. 11 Feb 2022

[17].    Yong-Fei Li, Peng-Peng Cheng, Lu-Yan Zhou, Ze-Han Liu, Zhi-Yuan Zuo*, Xue-Peng Zhan*, and Jie-Zhi Chen, Light-induced resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors, Solid State Electronics, 2021, 186: 108166. Dec 2021

[18].    Shijie Zhang, Zuoli He*, Shasha Xu, Xuan Li, Jing Zhang, Xuepeng Zhan*, Mingchong Dai*, and Shuguang Wang*, In-situ liquid-phase growth strategies of g-C3N4 solar driven heterogeneous catalysts for environmental applications, Solar RRL, 2021, 5(8): 2100233. 03 June 2021

[19]. Xue-Peng Zhan, Guo-Qing Zhao, Xiao-Lin Yu, Bo Chen, and Jie-Zhi Chen*, Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources, Nanotechnology, 2021, 32 35LT01.

[20]. Xue-Peng Zhan, Yi-Fang Xi, Qian-Wen Wang, Wei-Qiang Zhang, Zhi-Gang Ji, and Jie-Zhi Chen*, Dual-point technique for multi-trap RTN signal extraction, IEEE Access, 2020, 8: 88141-88146.

[21]. Xue-Peng Zhan, Yue Su, Yao Fu, Jie-Zhi Chen*, and Huai-Liang Xu*, Phosphorous-doped α-Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing, IEEE Transactions on Semiconductor Manufacturing, 2019, 33(1): 116-120.

[22]. Xue-Peng Zhan, Cheng-Da Shen, Zhi-Gang Ji*, Jie-Zhi Chen*, Hui Fang, Fang-Bin Guo, Jian-Fu Zhang, A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 2019, 40(5): 674-677.

[23]. Xue-Peng Zhan, Meng-Yao Hou, Fu-Shuai Ma, Yue Su, Jie-Zhi Chen*, Huai-Liang Xu*, Room temperature crystallization of amorphous silicon film by ultrashort femtosecond laser pulses, Optics & Laser Technology, 2019, 112, 363-367.

[24]. Xue-Peng Zhan†, Yi-Jun Wang†, Yue Su, Mu-Tian Li, Hong-Wei Zang, Huai-Liang Xu*, Bin Liu*, Hong-Bo Sun*, Micro-nano-texturing inner surfaces of small-caliber high aspect ratio and superhydrophobic artificial vessels using femtosecond laser filamenting pulses, Advanced Materials Interfaces, 2018, 5(23), 1801148.

[25]. Xue-Peng Zhan, Fu-Shuai Ma, Yuan Li, Jie-Zhi Chen*, Huai-Liang Xu*, Crystallizing Amorphous Silicon Film by Using Femtosecond Laser Pulses, 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, Beijing, China, November 21-November 23

[26]. Xue-Peng Zhan, Huai-Liang Xu*, Chun-Hao Li, Hong-Wei Zang, Chang Liu, Ji-Hong Zhao and Hong-Bo Sun, Remote and rapid micromachining of broadband low-reflectivity black silicon surfaces by femtosecond laser filaments, Optics Letters, 2017, 42(3), 510-513. (Editors’ Pick)

[27]. Xue-Peng Zhan, Ying-Xin Xu, Huai-Liang Xu*, Qiu-Lan Huang, Zhi-Shan Hou, Wei Fang*, Qi-Dai Chen and Hong-Bo Sun, Toward on-chip unidirectional and single-mode polymer microlaser, Journal of Lightwave Technology, 2017, 35(11), 2331-2336.

[28]. Xue-Peng Zhan, Xu-Lin Zhang, Hong-Hua Fang*, Qi-Dai Chen, Huai-Liang Xu, and Hong-Bo Sun*, Plasmon-photon coupled modes lasing in a silver-coated hemisphere, IEEE Photonics Technology Letters, 2015, 28(3): 351-354.

[29]. Xue-Peng Zhan, Huai-Liang Xu*, and Hong-Bo Sun, Femtosecond laser processing of microcavity lasers, Frontiers of Optoelectronics, 2016, 9(3): 420-427.

[30]. Xue-Peng Zhan, Jin-Feng Ku, Ying-Xin Xu, Xu-Lin Zhang, Jia Zhao, Wei Fang, Huai-Liang Xu*, and Hong-Bo Sun*, Unidirectional lasing from a spiral-shaped microcavity of dye-doped polymers, IEEE Photonics Technology Letters, 2014, 27(3): 311-314.


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