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Optimal Program-Read Schemes Towards Highly Reliable Open Block Operations in 3D Charge-trap NAND Flash Memory
Affiliation of Author(s):信息科学与工程学院
Journal:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
First Author:贾梦华
Document Code:0DDF28AB18DB479F96BB41E567C77425
Issue:41
Number of Words:3
Translation or Not:no
Date of Publication:2022-11-01