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Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
Affiliation of Author(s):信息科学与工程学院
Journal:IEEE Electron Device Letters
First Author:李晓鹏
Document Code:B7387508BC04489DA41FA8F6DF9895B9
Issue:44(8)
Number of Words:3
Translation or Not:no
Date of Publication:2023-08-01