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Enhanced Ferroelectricity of Hf-Based Memcapacitors by Adopting Ti Insert-Layer and C-V Measurement for Constructing Energy-Efficient Reservoir Computing Network
Affiliation of Author(s):信息科学与工程学院
Journal:Advanced Electronic Materials
Document Code:1847113879724855298
Number of Words:2
Translation or Not:no
Date of Publication:2024-10-04