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Impact of Program-Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability
Affiliation of Author(s):信息科学与工程学院
Journal:micromachine
First Author:Zheng, Xuesong
Document Code:1843556170194849793
Volume:15
Issue:9
Number of Words:2
Translation or Not:no
Date of Publication:2024-09-01