詹学鹏
个人信息Personal Information
副教授 硕士生导师
性别:男
毕业院校:吉林大学
学历:研究生(博士后)
学位:博士
在职信息:在职
所在单位:信息科学与工程学院
入职时间:2019-07-01
电子邮箱:zhanxuepeng@sdu.edu.cn
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- [1] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films. IEEE Electron Device Letters, 1, 2023.
- [2] 唐鸣丰. Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices, 2023.
- [3] 冯扬. Near-Threshold-Voltage Operation in Flash-based High-Precision Computing-in-Memory to Implement Poisson Image Editing. SCIENCE CHINA-Information Sciences, 2023.
- [4] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films. IEEE Electron Device Letters, 44, 753, 2023.
- [5] 詹学鹏. Phosphorous-Doped α -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing. IEEE Transactions on Semiconductor Manufacturing, 2019.
- [6] 詹学鹏. A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 2019.
- [7] 桑鹏鹏. Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance. IEEE Transactions on Electron Devices, 2022.
- [8] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films. IEEE Electron Device Letters, 2023.
- [9] 孙朝辉. Flash-based in-memory computing for stochastic computing in image edge detection. Journal of Semiconductors, 2023.
- [10] 李晓鹏. Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair. IEEE Electron Device Letters, 2023.
- [11] 冯扬. A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit Density. IEEE Transactions on Electron Devices, 2023.
- [12] 贾梦华. Optimal Program-Read Schemes Towards Highly Reliable Open Block Operations in 3D Charge-trap NAND Flash Memory. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2022.
- [13] 赵国庆. Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing. IEEE Transactions on Nanotechnology, 2022.
- [14] 唐鸣丰. Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices, 2023.
- [15] 王成城. Complementary Digital and Analog Resistive Switching Based on AlOx Monolayer Memristors for Mixed-Precision Neuromorphic Computing. IEEE Transactions on Electron Devices, 2023.
- [16] 冯扬. Fully Flash-based Reservoir Computing Network with Low Power and Rich States. IEEE Transactions on Electron Devices, 2023.
- [17] 吴书昊. Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. MICROELECTRONICS JOURNAL, 2023.
- [18] 齐悦冉. An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory. MICROMACHINES, 2023.
- [19] 魏巍. Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2. Journal of applied physics, 131, 2022.
- [20] Tang, Mingfeng. A Compact Fully Ferroelectric FETs Reservoir Computing Network with Sub-100ns Operating Speed. IEEE Electron Device Letters, 2022.