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个人信息Personal Information
教授 硕士生导师
性别：男
毕业院校：吉林大学
学历：研究生(博士后)
学位：博士生
在职信息：在职
所在单位：信息科学与工程学院
入职时间：2019-07-01
电子邮箱：zhanxuepeng@sdu.edu.cn
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- [1] 窦小禹. Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation. APPLIED PHYSICS LETTERS, 124, 2024.
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- [3] 汪倩文. P-type cold-source field-effect transistors with TcX2 and ReX2 (X= S, Se) cold source electrodes: A computational study. Chinese Physics B, 2023.
- [4] 冯扬. Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance. Journal of Semiconductors, 45, 2024.
- [5] 方晓彤. High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage. IEEE Transactions on CAD of Integrated Circuits and Systems (TCAD), 42, 3224, 2023.
- [6] 齐悦冉. An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory. MICROMACHINES, 14, 2023.
- [7] 冯扬. Fully Flash-Based Reservoir Computing Network With Low Power and Rich States. IEEE Transactions on Electron Devices, 2023.
- [8] 陈博. Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing. 纳米技术, 34, 2023.
- [9] 台路. Toward Low-Thermal-Budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation. IEEE Electron Device Letters, 44, 1959-1962, 2023.
- [10] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films. IEEE Electron Device Letters, 1, 2023.
- [11] 唐鸣丰. Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices, 2023.
- [12] 冯扬. Near-Threshold-Voltage Operation in Flash-based High-Precision Computing-in-Memory to Implement Poisson Image Editing. SCIENCE CHINA-Information Sciences, 2023.
- [13] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films. IEEE Electron Device Letters, 44, 753, 2023.
- [14] 詹学鹏. Phosphorous-Doped α -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing. IEEE Transactions on Semiconductor Manufacturing, 2019.
- [15] 詹学鹏. A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 2019.
- [16] 桑鹏鹏. Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance. IEEE Transactions on Electron Devices, 2022.
- [17] 台路. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films. IEEE Electron Device Letters, 2023.
- [18] 孙朝辉. Flash-based in-memory computing for stochastic computing in image edge detection. Journal of Semiconductors, 2023.
- [19] 李晓鹏. Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair. IEEE Electron Device Letters, 2023.
- [20] 冯扬. A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit Density. IEEE Transactions on Electron Devices, 2023.