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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：吉林大学
学历：研究生(博士后)
学位：博士生
在职信息：在职
所在单位：信息科学与工程学院
入职时间：2019-07-01
电子邮箱：zhanxuepeng@sdu.edu.cn
扫描关注
- [1] Zheng, Xuesong. Impact of Program-Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. micromachine, 15, 2024.
- [2] Wang, Hai. Flash-based Computing-in-Memory (CiM) Towards Stochastic Computing with Low Power-consumption and High Noise-immunity. 45-46, 2024.
- [3] Mei, Junyao. Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. 53-54, 2023.
- [4] . Enhanced Ferroelectricity of Hf-Based Memcapacitors by Adopting Ti Insert-Layer and C-V Measurement for Constructing Energy-Efficient Reservoir Computing Network. Advanced Electronic Materials, 2024.
- [5] Liu, Yizhi. Enhanced FeFET Performance for Energy Efficient Neuromorphic Computing at Cryogenic Conditions. 2024.
- [6] 柏茂颖. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. SCIENCE CHINA-Information Sciences, 67, 2024.
- [7] . Laser processing induced nonvolatile memory in chaotic graphene oxide films for flexible reservoir computing applications. Journal of Semiconductors, 45, 2024.
- [8] . Van der Waals polarity-engineered 3D integration of 2D complementary logic. nature, 630, 346-352, 2024.
- [9] Liu, Yizhi. High-Speed True Random Number Generator With Multiple Entropy Sources: Ring Oscillator Jitter and Random Telegraph Noise. IEEE EMBEDDED SYSTEMS LETTERS, 2025.
- [10] Li, Yongfei. Light-induced nonvolatile resistive switching in Cs(0.15)FA(0.85)PbI(3-X)Br(X) perovskite-based memristors. Solid-State Electronics, 186, 2021.
- [11] Shuhao Wu. Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. MICROELECTRONICS JOURNAL, 137, 2023.
- [12] Chengcheng Wang. Complementary Digital and Analog Resistive Switching Based on AlO<sub>x</sub> Monolayer Memristors for Mixed-Precision. IEEE Transactions on Electron Devices, 70, 4488, 2023.
- [13] Li, Wanying. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory. ADVANCED MATERIALS , 35, 2023.
- [14] Chen, Bo. Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing. NANOTECHNOLOGY, 34, 2023.
- [15] Tang, Mingfeng. A Compact Fully Ferroelectric-FETs Reservoir Computing Network With Sub-100 ns Operating Speed. IEEE Electron Device Letters, 43, 1555-1558, 2022.
- [16] 詹学鹏. Insights of V G-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. SCIENCE CHINA-Information Sciences, 65, 297-298, 2022.
- [17] Tang, Mingfeng. Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 192-196, 2022.
- [18] 桑鹏鹏. an der Waals heterostructure contact strategy for barrier-free 2D complementary transistors. Advanced Functional Materials, 2024.
- [19] 窦小禹. Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation. APPLIED PHYSICS LETTERS, 124, 2024.
- [20] . Experimental observations on C-V measurement caused performance degradations in Hf0.5Zr0.5O2ferroelectric film. 378-380, 2022.