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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：吉林大学
学历：研究生(博士后)
学位：博士生
在职信息：在职
所在单位：信息科学与工程学院
入职时间：2019-07-01
电子邮箱：
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- [1] . Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs. MICROMACHINES, 16, 2025.
- [2] . Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1？xO2 ferroelectric film. SCIENCE CHINA-Information Sciences, 68, 2025.
- [3] 李晓鹏. Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025.
- [4] 李晓鹏. Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations. IEEE Transactions on Electron Devices, 71, 5361-5366, 2024.
- [5] . Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing. APPLIED PHYSICS LETTERS, 125, 2024.
- [6] 台路. Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles). IEEE Transactions on Electron Devices, 1-4, 2024.
- [7] . Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs. MICROMACHINES, 16, 2025.
- [8] 李晓鹏. In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms. IEEE Transactions on Electron Devices, 2024.
- [9] 程永豪. First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications. ACS Applied Electronic Materials, 2025.
- [10] 桑鹏鹏. Toward high-performance monolayer graphdiyne transistor: Strain engineering matters. Applied Surface Science, 2021.
- [11] 桑鹏鹏. Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance. Technical Digest - International Electron Devices Meeting, 2021.
- [12] 桑鹏鹏. Van der Waals Heterostructure Contact Strategy for Barrier-Free 2D Complementary Transistors. Advanced functional materials, 2024.
- [13] 桑鹏鹏. A Computational Study on Electrical Contacts in Monolayer hhk-Si Field-Effect Transistors. IEEE Transactions on Electron Devices, 2025.
- [14] Zheng, Xuesong. Impact of Program-Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. micromachine, 15, 2024.
- [15] Wang, Hai. Flash-based Computing-in-Memory (CiM) Towards Stochastic Computing with Low Power-consumption and High Noise-immunity. 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024, 45-46, 2024.
- [16] Mei, Junyao. Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2023, 53-54, 2023.
- [17] . Enhanced Ferroelectricity of Hf-Based Memcapacitors by Adopting Ti Insert-Layer and C-V Measurement for Constructing Energy-Efficient Reservoir Computing Network. Advanced Electronic Materials, 2024.
- [18] Liu, Yizhi. Enhanced FeFET Performance for Energy Efficient Neuromorphic Computing at Cryogenic Conditions. 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024, 2024.
- [19] 柏茂颖. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. SCIENCE CHINA-Information Sciences, 67, 2024.
- [20] . Laser processing induced nonvolatile memory in chaotic graphene oxide films for flexible reservoir computing applications. Journal of Semiconductors, 45, 2024.