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The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
Release Time:2024-05-17| Hits:
Institution:新一代半导体材料研究院
Title of Paper:The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
Journal:IEEE Transactions on Electron Devices
First Author:张斌
Document Code:B1BC604AAB9442D8AE18D256B1AA3FCF
Issue:1
Number of Words:4
Translation or Not:No
Date of Publication:2024-04
Release Time:2024-05-17
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