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The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
2024-04-09  Hits:

Affiliation of Author(s):新一代半导体材料研究院
Journal:IEEE Transactions on Electron Devices
First Author:张斌
Document Code:B1BC604AAB9442D8AE18D256B1AA3FCF
Issue:1
Number of Words:4
Translation or Not:no
Date of Publication:2024-04-09
Date of Publication:2024-04-09