钟宇
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Paper Publications
- [1] 李琪. Structures, influences, and formation mechanism of planar defects on (100), (001) and (-201) planes in β-Ga2O3 crystals. Physical chemistry chemical physics, 26, 12564-12572, 2024.
- [2] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
- [3] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
- [4] 刘明勋. In situ formation of a low-dimensional perovskite structure for efficient single-crystal MAPbI3 solar cells with enhanced ambient stability. Journal of Materials Chemistry C, 2025.
- [5] 王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
- [6] 王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 179-183, 2025.
- [7] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
- [8] 罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
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