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The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices
Release Time:2025-05-16| Hits:
Institution:新一代半导体材料研究院
Title of Paper:The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices
Journal:Physica Status Solidi A-Applications and Materials Science
First Author:罗兰
Document Code:1906642867614052353
Number of Words:8
Translation or Not:No
Date of Publication:2025-01
Release Time:2025-05-16
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