linzhaojun 山东大学主页平台管理系统--Home

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林兆军

Professor

Name (Simplified Chinese):林兆军

Name (Pinyin):linzhaojun

Date of Employment:2003-12-08

School/Department:集成电路学院

Gender:Male

Status:Employed

Whether on the job:1

Academic Honor:

Honors and Titles:

Current position: Home >> Scientific Research >> Paper Publications

[161] linzhaojun. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterost. Chinese Physics B, 18, 3980, 2009.
[162] linzhaojun. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in str. Applied physics letters, 91, 173507 -1, 2007.
[163] Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of. Journal of applied physics, 99, 2005.
[164] linzhaojun. The influence of Schottky contact metals on the strain of AlGaN barrier layers. Journal of applied physics, 103, 044503 -1, 2008.
[165] Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlG. Modern Physics Letters B, 30, 2016.
[166] ？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure f. ？Superlattices and Microstructures , 100, 2016.
[167] Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlG. Modern Physics Letters B, 30, 2015.
[168] Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure fie. ？Superlattices and Microstructures, 100, 2015.
[169] ？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure f. ？Superlattices and Microstructures , 100, 2015.
[170] ？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure . ？Superlattices and Microstructures , 100, 2015.
[171] ？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Eff. ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63, 2016.
[172] ？Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure. ？JOURNAL OF APPLIED PHYSICS , 119, 2016.
[173] ？The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Hetero. ？Journal of the Korean Physical Society, 68, 2016.
[174] ？？Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Ext. ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63, 2016.
[175] Meng lingguo and linzhaojun. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN. Applied physics letters, 101, 113501, 2012.
[176] Meng lingguo and linzhaojun. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/. Nanoscale research letters, 7, 434, 2012.
[177] Meng lingguo and linzhaojun. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transist. Journal of applied physics, 112, 054513, 2012.
[178] Meng lingguo and linzhaojun. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from . Chinese Physics B, 21, 097104, 2012.
[179] linzhaojun. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier. Chinese Physics B, 21, 017103-1, 2012.
[180] linzhaojun , Cheng Aijie and cuipeng. Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Het. scientific reports, 8, 2018.

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