linzhaojun 山东大学主页平台管理系统--Home

- 中文

林兆军

Professor

Name (Simplified Chinese):林兆军

Name (Pinyin):linzhaojun

Date of Employment:2003-12-08

School/Department:集成电路学院

Gender:Male

Status:Employed

Whether on the job:1

Academic Honor:

Honors and Titles:

Current position: Home >> Scientific Research >> Paper Publications

[1] 王鸣雁. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT. IEEE Electron Device Letters, 2023.
[2] 周衡. Study on the frequency characteristics of split-gate AlGaN/GaN HFETs. Modern Physics Letters B, 2023.
[3] 王鸣雁. A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in A. IEEE Transactions on Electron Devices, 1-5, 2023.
[4] 周衡. Study of electrical transport properties of GaN-based side-gate heterostructure transistors. Applied Physics Letters, 2022.
[5] 王鸣雁. Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs. IEEE Electron Device Letters, 2022.
[6] 刘阳. A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source v. Micro and Nanostructures, 2022.
[7] 杨勇雄. Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 69, 63, 2022.
[8] 刘阳. A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate. AIP ADVANCES, 12, 2022.
[9] Liu, Yan. Comparison of ratio of gate length to gate-drain distance influences on source access resistance of . MICROELECTRONIC ENGINEERING, 247, 2021.
[10] 李亚萍. An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2640, 2020.
[11] 李云鹏. Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24, 208, 2018.
[12] 姜光远. The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heteros. Solid-State Electronics, 186, 2021.
[13] 姜光远. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode . Applied Physics A: Materials Science and Processing, 127, 2021.
[14] 刘阳. A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology. SCIENTIFIC REPORTS, 11, 2021.
[15] 姜光远. The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in . Superlattices and Microstructures, 156, 2021.
[16] 姜光远. The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in A. Physica E-Low-Dimensional Systems & Nanostructures, 127, 2021.
[17] 杨勇雄. Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN h. AIP ADVANCES, 11, 2021.
[18] 李云鹏. Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power. Applied Physics Letters, 27, 2018.
[19] 李云鹏. Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications B. IEEE Transactions on Electron Devices, 66, 950, 2019.
[20] 崔鹏. Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors. Physica E-Low-Dimensional Systems & Nanostructures, 119, 2020.

total180 1/9

firstpreviousnext last Page