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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature

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Institution:新一代半导体材料研究院

Title of Paper:Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature

Journal:21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024

First Author:王天露

Document Code:1897581192143368193

Page Number:179-183

Number of Words:3

Translation or Not:No

Date of Publication:2025-01

Release Time:2025-05-16

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