Handoko LINEWIH
Gender:
Male
School/Department:
新一代半导体材料研究院
Date of Employment:
2023-02-20
2024-12-01
[1]
陈思衡.
High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V.
IEEE Electron Device Letters,
12,
2343,
2024.
2024-09-16
[2]
罗鑫.
Enhanced device performance of GaN high electron mobility transistors with in situ crystalline Si....
APPLIED PHYSICS LETTERS,
125,
2024.
2024-03-01
[3]
陈思衡.
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas ....
Solid-State Electronics,
213,
2024.
2024-04-01
[4]
罗鑫.
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility....
Journal of Physics and Chemistry of Solids,
187,
2024.
2024-04-09
[5]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
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