Handoko LINEWIH
Gender:
Male
School/Department:
新一代半导体材料研究院
Date of Employment:
2023-02-20
2024-04-09
[1]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
2025-06-01
[2]
王天露.
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.
MICROELECTRONICS JOURNAL,
160,
2025.
2025-01-16
[3]
王天露.
Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature.
179-183,
2025.
2025-01-01
[4]
罗兰.
The Principles and Applications of Electrical Characterization Techniques for Electrically Active....
Physica Status Solidi A-Applications and Materials Science,
2025.
2025-03-06
[5]
曾繁朋.
failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse b....
MICROELECTRONICS RELIABILITY,
1,
2025.
2024-11-18
[6]
曾繁朋.
Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test.
2024.
2025-02-10
[7]
来玲玲.
Impacts of silicon carbide defects on electrical characteristics of SiC devices.
JOURNAL OF APPLIED PHYSICS,
2025.
2024-12-01
[8]
陈思衡.
High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V.
IEEE Electron Device Letters,
12,
2343,
2024.
2024-09-16
[9]
罗鑫.
Enhanced device performance of GaN high electron mobility transistors with in situ crystalline Si....
APPLIED PHYSICS LETTERS,
125,
2024.
2024-03-01
[10]
陈思衡.
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas ....
Solid-State Electronics,
213,
2024.
2024-04-01
[11]
罗鑫.
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility....
Journal of Physics and Chemistry of Solids,
187,
2024.
2024-04-09
[12]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
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