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Handoko LINEWIH

Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

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Current position: Home >> Scientific Research >> Paper Publications

Paper Publications

2024-04
[1] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
2025-06
[2] 王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
2025-01
[3] 王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024, 179-183, 2025.
2025-01
[4] 罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
2025-03
[5] 曾繁朋. A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage. MICROELECTRONICS RELIABILITY, 168, 1, 2025.
2024-11
[6] 曾繁朋. Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test. 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2024.
2025-02
[7] 来玲玲. Impacts of silicon carbide defects on electrical characteristics of SiC devices. JOURNAL OF APPLIED PHYSICS, 1, 2025.
2024-12
[8] 陈思衡. High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V. IEEE Electron Device Letters, 12, 2343, 2024.
2024-09
[9] 罗鑫. Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer. APPLIED PHYSICS LETTERS, 125, 2024.
2024-03
[10] 陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.

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