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陈思衡. High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V. IEEE Electron Device Letters, 12, 2343, 2024.
罗鑫. Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer. APPLIED PHYSICS LETTERS, 125, 2024.
陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.
罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors. Journal of Physics and Chemistry of Solids, 187, 2024.
张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
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