Handoko LINEWIH
Gender:
Male
School/Department:
新一代半导体材料研究院
Date of Employment:
2023-02-20
College:
Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Working-Papers
Paper Publications
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张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2025.
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王天露.
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.
MICROELECTRONICS JOURNAL,
160,
2025.
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王天露.
Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature.
21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024,
179-183,
2025.
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罗兰.
The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices.
Physica Status Solidi A-Applications and Materials Science,
2025.
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曾繁朋.
A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage.
MICROELECTRONICS RELIABILITY,
168,
1,
2025.
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曾繁朋.
Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test.
2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
2025.
Patents
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Published Books
Research Projects
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Research Team
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