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张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 179-183, 2025.
罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
曾繁朋. failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage. MICROELECTRONICS RELIABILITY, 1, 2025.
曾繁朋. Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test. 2024.
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