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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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Current position: Home >> Scientific Research >> Patents

一种高性能GaN MIS-HEMT的制备方法

Hits: Praise

Affilication of Author(s):新一代半导体材料研究院

Type of Patent:发明

Application Number:202310437073.6

Number of Inventors:8

Service Invention or Not:no

Application Date:2023-04-18

Publication Date:2024-02-02

Authorization Date:2024-02-02

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