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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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一种高性能GaN MIS-HEMT的制备方法

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Title:一种高性能GaN MIS-HEMT的制备方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310437073.6

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-04-18

Publication Date:2024-02-02

Authorization Date:2024-02-02

Release Time:2024-05-18

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