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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Current position: Home >> Scientific Research >> Patents
一种改善短路能力的SiCMOSFET器件

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Title:一种改善短路能力的SiCMOSFET器件

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202311746831.9

Number of Inventors:4

Service Invention or Not:No

Application Date:2023-12-19

Publication Date:2024-03-05

Authorization Date:2024-03-05

Release Time:2024-05-18

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