Qr code
中文
Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
MOBILE Version
Click:Times

The Last Update Time: ..

1Ssw6yvAfY6Hcif32IFnU1Yl9ADwA4cNGhPdC59k9rBz6txEEEgJUIC5UleJ
Current position: Home >> Scientific Research >> Patents
一种GaN HEMTs及降低器件欧姆接触阻值的方法

Hits:

Title:一种GaN HEMTs及降低器件欧姆接触阻值的方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310430500.8

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-04-18

Publication Date:2024-06-11

Authorization Date:2024-06-11

Release Time:2024-06-13

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University