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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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基于能带调控结终端的氮化镓肖特基二极管及其制备方法

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Title:基于能带调控结终端的氮化镓肖特基二极管及其制备方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202410619665.4

Number of Inventors:4

Service Invention or Not:No

Application Date:2024-05-20

Publication Date:2024-08-20

Authorization Date:2024-08-20

Release Time:2024-09-01

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