Philip Zhang
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Gender:Male
Education Level:Postgraduate (Doctoral)
Alma Mater:University of Delaware
Paper Publications
- [41] 花明 , Y. Sun , M. Li , Z. Liu , Y. Chen , Y. Shi , Y. Ning , Y. Zhang , F. Yang and X. Wang. Electromagnetically induced transparency analog in terahertz hybrid metal–dielectric metamaterials. AIP Advances, 11, 2021.
- [42] L. Wang , Z. Gao , Z. Hou , J. Song , X. Liu , Y. Zhang , X. Wang , F. Yang and Y. Shi. Active Modulation of an All-Dielectric Metasurface Analogue of Electromagnetically Induced Transparency in Terahertz. ACS Omega, 6, 4480, 2021.
- [43] 郭庆磊 , Z. Wei , C. Jiang , H. Zhao , Y. Zhang , G. Wang , D. Chen , Z. Di and Y. Mei. Semidry release of nanomembranes for tubular origami. APPLIED PHYSICS LETTERS Journal, 117, 2020.
- [44] 凌昊天 , Y. Zhang* , P. Qian , P. Chen , Y. Shi , Y. Wang , Q. Xin , S. Huan , Q. Wang and A. Song*. Spoof surface plasmon polariton band-stop filter with single-loop split ring resonators. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 30, 2020.
- [45] 刘笑宇 , Y. Zhang , H. Feng , Y. Ning , Y. Shi , X. Wang and F. Yang. Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles. ACS Omega, 5, 3000, 2020.
- [46] X. Liu , Y. Zhang , H. Feng , Y. Ning and Y. Shi*. Manipulating optical absorption of indium selenide using plasmonic nanoparticles. ACS Omega, 5, 3000-3005, 2020.
- [47] H. Ling , Y. Zhang* , P. Qian , P. Chen , Y. Wang , Q. Xin , S. Huan , Q. Wang and A. Song*. Spoof Surface Plasmon Polariton Band-Stop Filter with Single-Loop Split Ring Resonators. Int. J. RF Microw. C. Eng., doi10.1002/mmce.22267, 2020.
- [48] Y. Zhang , H. Ling , P. Chen , P. Qian , Y. Shi , Y. Wang , H. Feng , Q. Xin , Q. Wang* , S. Shi , X. Pan , X. Sheng and and A. Song*. Tunable Surface Plasmon Polaritons with Monolithic Schottky Diode. ACS Appl. Electro. Mater., 1, 2124-2129, 2019.
- [49] X. Zhang , W. Cai , J. Zhang , J. Brownless , J. Wilson , Y. Zhang and and A. Song*. Solution-Processed TiO2-Based Schottky Diode with a Large Barrier Height. IEEE Electron Device Lett., 40, 1378-1381, 2019.
- [50] Y. Wang , J. Zhang , G. Liang , Y. Shi , Y. Zhang , Z. R. Kudrynskyi , Z. D. Kovalyuk , A. Patane , Q. Xin* and and A. Song*. Schottky-barrier thin-film transistors based on HfO2-capped InSe. Appl. Phys. Lett., 115, 2019.